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  • A Study of Methods and Means of Measurements of Optical Parameters of Semiconductor Lasers Based on Nanoheterostructures

A Study of Methods and Means of Measurements of Optical Parameters of Semiconductor Lasers Based on Nanoheterostructures

Student: Voloshin Dmitriy

Supervisor: Yury Zolotarevsky

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Measuring Technologies of Nanoindustry (Master)

Final Grade: 10

Year of Graduation: 2016

Object of research - semiconductor lasers on the basis of nanoheterostructures, as well as optical, energy and spectral parameters that characterize them. Purpose – the study of methods and means of measurements of the optical, energetic and spectral parameters of semiconductor lasers based nanoheterostructures in order to improve their energy efficiency. In this final qualification work is the analysis of semiconductor lasers on the basis of nanoheterostructures, which allowed us to choose the typical characteristics of these lasers to conduct the study. Describes the methods and means of measurements (SI) optical, energetic and spectral parameters of semiconductor lasers based on nanoheterostructures. Performed Metrology study C average power, wavelength and angle of divergence of laser radiation of semiconductor lasers on the basis of nanoheterostructures to determine the actual error characteristics of the measured parameters. The volume of dissertation: 125 pages, 25 figures, 18 tables, 36 references, and 2 appendices.

Full text (added May 12, 2016)

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