Research and Simulation of Characteristics of High Frequency CMOS Circuit Elements

In the bachelor’s graduation thesis, methods and results of simulation and study of high-frequency CMOS elements and circuits in the frequency range from 0.1 to 1 GHz were considered. In the literature review, theoretical aspects of MOSFETs simulation were presented as well as circuit analysis method using S-parameters. Comparison of EKV model, Bsim3v3 model, Philips MOS Model 9 in RF range was given. In the experimental part study of a high-frequency MOSFET characteristics, determination of its parameters was described; simulation, fabrication, measurement and research of high-frequency MOSFET amplifier was presented. S-parameters of the obtained amplifier were listed. Also described were AWR Microwave Office software that was used for simulation of the high-frequency MOSFET amplifier and the vector network analyzer “Obzor-304/1” that was used for analysis of dynamic parameters of the fabricated circuit. For the high-frequency MOSFET amplifier comparison was done of S-parameters obtained using AWR Microwave Office software and measured by means of the vector network analyzer “Obzor-304/1”.