Year of Graduation
Processing of Measured I-V-characteristics of MOSFETs under Extreme Temperature Conditions and Building Their Models for CAD Systems
In the present work SOI MOSFET’s at the extreme temperature (up to 300°C) were investigated. The purpose of the work was to evaluate the operability of elements and fragments of analog CMOS circuits manufactured with 0.5-micron SOI CMOS-technology. During the research main MOSFET parameters temperature dependences and available MOSFET compact models were investigated. The results of the MOSFET I-V characteristics at extreme temperature were processed and based on these results compact models of MOSFET’s were developed. The comparator circuit was simulated based on the developed models and investigated at high-temperature range.