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  • Theoretical and Experimental Investigation of Electrical Characteristics of Submicron MOSFETs and Circuit Fragments for Telecommunication Systems

Theoretical and Experimental Investigation of Electrical Characteristics of Submicron MOSFETs and Circuit Fragments for Telecommunication Systems

Student: Danykin Vladimir

Supervisor: Konstantin O. Petrosyants

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Electronic Engineering (Master)

Final Grade: 8

Year of Graduation: 2017

In this paper, the object of the study are n-channel submicron MOS field-effect transistors of various sizes. The purpose of this work was to study the effect of temperature on the current characteristics of MOSFET’s. In the process of work, the principles of operation of MOSFETs, the effect of temperature on their characteristics, were studied. A switching unit was developed and implemented for the hardware and software complex that conducts automated measurements of MOS transistors current-voltage characteristics. The characteristics measurements results for n-channel submicron MOSFETs are presented. The values of threshold voltage, mobility and leakage current of transistors and SPICE model parameters were determined. Logical circuits were simulated: inverter, full adder, and2. The report contains 57 pages, 45 figures, 2 tables.

Full text (added May 14, 2017)

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