Computer Aided Investigation of Low Temperature Effects on Characteristics of Analog MOSFET Circuits for Telecommunication Applications

Student: Mkhitarian Garik

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Infocommunication Technologies and Systems (Bachelor)

Final Grade: 8

Year of Graduation: 2017

This work includes modeling of amplifiers’ output signal in dependence of temperature. Amplifier that based on common-source scheme, and differential amplifier are modeled in LtSpice at -200, -100, 0, 100, 200 ˚С. The calculated voltage gains of these cascades are based on obtained graphs of output signals. The operational amplifier consisting of three amplifying stages, is considered at temperatures of -150, -100, -50, 0, 27, 50, 100, 150 ˚C. Voltage gains for each structural stage are obtained in result of DC analysis; in addition the frequency response of the entire operational amplifier is given at the same eight temperatures.

Full text (added May 23, 2017)

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