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  • Investigation of Thermal Effects Influence on Electrical Characteristics of Submicron MOSFETs for Telecommunication Systems. Building MOSFET’s Thermal Models

Investigation of Thermal Effects Influence on Electrical Characteristics of Submicron MOSFETs for Telecommunication Systems. Building MOSFET’s Thermal Models

Student: Chetverikov Igor

Supervisor: Konstantin O. Petrosyants

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Electronic Engineering (Master)

Final Grade: 8

Year of Graduation: 2017

In this master's work investigates the influence of thermal effects on electrical characteristics of submicron MOSFETs for telecommunication systems. The object of research in this work is a submicron MOSFET transistor. The aim of this work is to experimentally investigate the thermal effects of submicron MOSFETs in a wide temperature range. The theoretical part deals with the influence of thermal effects on the characteristics of MOSFETs over a wide temperature range (77K - 500K) is considered. In the practical part. In the practical part the modeling of the threshold voltage and mobility dependencies on temperature, and also the improved model of the BSIM3v3 MOSFET is presented. This master's work consists of an introduction, two main parts, a conclusion and a bibliographic list. The theoretical and practical part is divided into subsections. The volume of the final qualifying work is 50 sheets, including 31 drawings and 35 formulas.

Full text (added May 14, 2017)

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