CMOS Elements Simulation with Account for Thermal and Radiation Effects

Student: Terek Egor

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Electronic Engineering (Master)

Year of Graduation: 2017

In this paper, the effect of radiation on the degradation of MOSFET parameters is analyzed, data processing is performed, as a result of irradiation of MOS transistors, and simulation of CMOS circuits taking into account the effect of temperature and radiation on the parameters of the circuit.

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