Computer Analysis of CMOS Voltage Reference Circuit Performance in Ambient of Space Temperature and Radiation Influence

Student: Maksimov Dmitriy

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Electronic Engineering (Master)

Final Grade: 8

Year of Graduation: 2018

In the present work of the CMOS SOI circuits of the reference voltage source for special-purpose equipment under the conditions of combined exposure to temperatures (up to + 200°C) and ionizing radiation from outer space (up to 1000 Doses of theft) is simulated. On the basis of the literature data, the parameters of the MOSFET models are taken into account, taking into account these effects, the reference voltage source scheme is modeled and optimized, the parameters of the circuit are compared with the data given in the literature

Full text (added May 20, 2018)

Student Theses at HSE must be completed in accordance with the University Rules and regulations specified by each educational programme.

Summaries of all theses must be published and made freely available on the HSE website.

The full text of a thesis can be published in open access on the HSE website only if the authoring student (copyright holder) agrees, or, if the thesis was written by a team of students, if all the co-authors (copyright holders) agree. After a thesis is published on the HSE website, it obtains the status of an online publication.

Student theses are objects of copyright and their use is subject to limitations in accordance with the Russian Federation’s law on intellectual property.

In the event that a thesis is quoted or otherwise used, reference to the author’s name and the source of quotation is required.

Search all student theses