Analysis of the Rejection Causes in the Production of Silicon Microwave Diodes of the Centimeter Range

Student: Smolkin Dmitry

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Electronic Engineering (Master)

Final Grade: 7

Year of Graduation: 2018

In this paper, we analyzed the causes of rejection in the production of silicon microwave p-i-n diodes. To carry out the research, a technique based on obtaining meza- crystal cross sections along the upper contact in a plane perpendicular to its base was used. The influence of the shape of the mesa-crystal and the thickness of the dielectric coating on its lateral surface on the magnitude of the breakdown voltage and the leakage current of the device is determined. Numerical data on the dependence of the differential resistance (Rd), the breakdown voltage (Uprobe) and the working capacitance (Cd) of the meza-crystal on the thickness of the i-layer of the diode base are presented.

Full text (added May 20, 2018)

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