Influence of Nitrogen Concentration on Electrical and Physical Properties of Disoredered NbN Films

Student: Roshchina Irina

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Applied Physics (Master)

Final Grade: 9

Year of Graduation: 2018

Single-photon detectors based on NbN films are very popular in various fields. SSPDs are a key technology for various applications, such as quantum key distribution, free-space laser communication, and detection and detection of distance by light. It is important to improve the performance of single-photon detectors. To improve the performance of the SSPD detector, depending on the nitrogen concentration in the superconducting NbN film, to further improve the detector performance. The paper presents the results of measurements and calculations of such electrophysical properties of SSPD as: critical temperature of superconducting transition, surface resistance, critical current of superconducting transition at 4.2 K, critical current density at 4.2 K.

Full text (added May 20, 2018)

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