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Assembly of Superconducting Microstructures using Van-der Waals Transfer Methods

Student: Sergey Martanov

Supervisor: Alexander Kuntsevich

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Applied Physics (Master)

Year of Graduation: 2018

This paper is devoted to the production of SrxBi2Se3 micro-samples and to the study of their superconducting properties. Previously, in the laboratory of strongly correlated structures of LPI RAS they detected the transition to the superconducting state of a single crystal of the same sample at Tc = 2,6 K. [9]. Interest in SrxBi2Se3 caused by a low concentration of charge carriers ≈ 1019cm-3, then for flake (20 nm thick) two-dimensional concentration of charge carriers ≈ 2·1013cm-2 will be achieved. Therefore, it is assumed that such a low concentration of charge carriers in the sample will be able to be controlled by the gate (SiO2), thereby we could "turning on/off" superconductivity. In this work, we described in detail all stages of the process of creating the sample for the final experiment to measure the temperature dependence of conductivity of micro-samples SrxBi2Se3. In particular, the production of flakes from a single crystal, the method of dry transfer of thin films with precise positioning, the process of photolithography using a laser lithograph, work on unit a vacuum electron-beam deposition, wiring contacts using an ultrasonic micro welding unit. The temperature dependence of the conductivity of SrxBi2Se3 micro-samples in a wide temperature range (2-300 K.) was finally measured. The experiment did not reveal superconductivity in the prepared samples. It is assumed that the reason for this was the chemical effect on the scales in the process of lithography (acetone, developer solution).

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