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Experimental Investigation and SPICE Models Development of CMOS Transistors with Account for Space Irradiation

Student: Boldov Alexander

Supervisor: Igor A. Kharitonov

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Infocommunication Technologies and Systems (Bachelor)

Final Grade: 9

Year of Graduation: 2019

Nowadays, the space industry is actively developing, and, consequently, the need for radiation-resistant electronic equipment is growing. CMOS transistors are involved in creating any electronic device. It is necessary to create transistor models to check their efficiency in space condition. This work presents the process of creating a model for CMOS transistors taking into account the influence of radiation: from the stage of transistor irradiation and measuring their characteristics to the stage of parameters generation in the IC-CAP program. It is important to note that models have been created for both n-channel transistors and p-channel transistors. These models predict the operation of transistors with account of radiation dose from 0 to 466 krad. Irradiation of the transistors was provided in stages in the mine of the reactor National Research Nuclear University "MEPhI".

Full text (added May 17, 2019)

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