Study of the Influence of Radiation on the Structure and Characteristics of the Bipolar Transistor Using TCAD

The object of the work is the bipolar silicon-germanium transistor SGB25V made by IHP-Electronics. The purpose of the study of the qualifying work is to create a device-technological model SiGe HBT (heterojunction bipolar transistor) SGB25V, modeling of electrical characteristics before and after exposure to gamma radiation, followed by a comparison with experimental data. The subject of the research is the main characteristics of silicon-germanium transistors when exposed to radiation effects. To perform the tasks, software methods for describing the structures of the transistor, numerical methods for solving 2D differential equations in partial derivatives, methods of approximation and processing of experimental results are used. Qualifying work consists of introduction, six chapters, conclusion, bibliography sources and one application. In addition to the input and output I-V characteristics, an extended set of characteristics was obtained, including dynamic ones. The obtained results adequately describe the experimental data with a twenty percent error. The results of the qualification work can be used to predict the radiation hardness of silicon-germanium transistors, as well as to create their circuit models. This interdisciplinary course work is presented on 78 pages, contains 5 tables, 57 figures, 30 sources of literature and one application used.