SPICE Simulation of the Circuit Characteristics Made on Bipolar Junction Transistors Taking into Account Different the Radiation Parameters

Student: Stepygin Dmitry

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Electronic Engineering (Master)

Final Grade: 8

Year of Graduation: 2019

In this paper, the object of the study is the effect of low dose rate on bipolar transistors and operational amplifier uA741. The aim of this work was to create a radiation SPICE-model considering the ELDRS effect. In the process, the approach to the creation of radiation-resistant models and the nature of the low-intensity effect was studied. Using the circuit simulation program LTSpiceIV was created radiation SPICE-model by adding to the base model new parameters, which allow to consider of a low-intensity and the simulation of electrical characteristics of bipolar transistors and OPAMP uA741 with different parameters of radiation exposure. The results can be used in the design of integrated circuits considering the effect of low intensity.

Full text (added May 19, 2019)

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