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Simulation of Sensitivity of Photosensitive CCD VLSI

Student: Morozova Ekaterina

Supervisor: Andrey Pugachyov

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Electronic Engineering (Master)

Year of Graduation: 2019

In this paper, the object of study is photodetector cells with microlenses of photosensitive integrated circuits on charge-coupled devices. Microlenses are used for focusing and concentrating light on the surface of the photodiode, and do not allow the light flux to fall on the insensitive areas of the device where information about the light flux collected by the CCD cell is lost. The aim of the work is to simulate the photosensitivity of a photodetector VLSI cell, to study the structure of photosensitive cells with microlenses of various sizes and configurations and to determine the optimal design parameters of the microlens. In the process of work, the following were studied: theoretical foundations of photosensitive CCD VLSI, systems of instrument-technological modeling Sentaurus TCAD (Synopsys). The simulation of the light-signal characteristics of the CCD cell, as well as the simulation of the dependence of the photosensitivity on the design parameters of the microlens and the pedestal. Numerical estimates were obtained for the increase in the photosensitivity of CCD cells using microlenses. The simulation results are planned for use in the department of photoelectronics of NPP Pulsar JSC.

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