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Measurement and Simulation of Logical Circuits with Account for Low Dose Rate Effects

Student: Alena Eliseeva

Supervisor: Lev M. Sambursky

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Infocommunication Technologies and Systems (Bachelor)

Year of Graduation: 2020

The goal of the final project was to obtain and verify SPICE-models for CMOS transistors manufactured by a domestic radiation hardened technology. In accordance with this, the task was to measure the characteristics of logical circuits considering low dose rate effects at a various absorbed dose, to elaborate the models of CMOS transistors based on results of conducted measurements, to simulate the investigated logic circuits in the SPICE program, and to determine the bias of their parameters. To achieve this goal, the circuits NAND IN74AC00, NOR IN74AC02 and ring oscillators collected on these circuits were ionized by a stream of gamma particles. Following that, the transfer and transient characteristics were measured for these circuits. Based on the acquired experimental data, the models of p-type and n-type CMOS transistors were developed considering the dose dependences of the threshold voltage and the charge carrier mobility. The obtained models of radiation-hardened transistors can be applied in simulating the logical circuits and predicting their behavior during irradiation.

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