Landau levels in Three-dimensional Topological Insulators with Warped Surface State

Student: Golubev Konstantin

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Materials. Devices. Nanotechnology (Master)

Final Grade: 8

Year of Graduation: 2020

In this thesis, we study the effect of warping on the spectrum and Landau levels of electrons in a topological insulator. For this purpose, the spectrum of a topological insulator is studied and modeled first without the influence of warping, and then with the influence of distortions. Landau levels are studied in the case of classical metal, then in the case of a topological insulator without warping, and then with the effect of warping. Based on the obtained mathematical models, the dependences of the energy of the Landau levels on the level number, and then on the strength of the magnetic field at various warping values are calculated and plotted. The analysis of the results is carried out.

Full text (added May 17, 2020)

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