CMOS Circuits Characteristics Simulation with Account for Hot-carriers Effect

With the development of technological processes of CMOS circuits with decreasing sizes, the electric fields in the CMOS structures increase and the effects of hot-carriers increase. These factors lead to aging of components over time, which can lead to failures, and they must be taken into account when modeling the operation of CMOS circuits. This paper is devoted to the modeling of CMOS transistors and circuits taking into account the effects of hot-carriers (hot-carriers injection and negative bias temperature instability). In the course of the work, programs for the Mathcad package were compiled and debugged, which allow simulating the aging characteristics of MOSFETs taking into account these factors. Using the results obtained in MathCad, analog and digital CMOS circuits were modeled in the LTspice environment and the influence of the effects of hot-carriers on these CMOS circuits and the deterioration of their parameters over time was analyzed.