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Research and Simulation of Analog Circuits Characteristics in the Cryogenic Temperature Range

Student: Rostovtsev Andrei

Supervisor: Mamed R. Ismail-zade

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Infocommunication Technologies and Systems (Bachelor)

Year of Graduation: 2021

The main goal of this work is to create, improve the existing Low-T versions of SPICE Ge JFET models for the cryogenic temperature range. For this, the phenomena that are observed at such low temperatures were studied, an analysis of the existing models of Ge JFETs and their shortcomings was carried out, a review of the basic tools, CAD systems used for simulation was made, a SPICE model of this transistor was built considering the studied low-temperature phenomena and simulated analog circuits using this model, with subsequent analysis of the parameters’ behavior depending on temperature.

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