Tatiana Pavlova
- Associate Professor:Joint Department of Quantum Technologies with Prokhorov General Physics Institute (RAS)
- Tatiana Pavlova has been at HSE University since 2017.
Education and Degrees
- 2007
Candidate of Sciences* (PhD)
- 2003
Degree in Nuclear Physics
National Research Nuclear University MEPhI
* Candidate of Sciences
According to the International Standard Classification of Education (ISCED) 2011, Candidate of Sciences belongs to ISCED level 8 - "doctoral or equivalent", together with PhD, DPhil, D.Lit, D.Sc, LL.D, Doctorate or similar. Candidate of Sciences allows its holders to reach the level of the Associate Professor.
According to the International Standard Classification of Education (ISCED) 2011, Candidate of Sciences belongs to ISCED level 8 - "doctoral or equivalent", together with PhD, DPhil, D.Lit, D.Sc, LL.D, Doctorate or similar. Candidate of Sciences allows its holders to reach the level of the Associate Professor.
Courses (2023/2024)
- Computer Simulation of Multiatomic Systems (Master’s programme; Faculty of Physics; 1 year, 1, 2 module)Rus
- Past Courses
Courses (2022/2023)
Computer Simulation of Multiatomic Systems (Master’s programme; Faculty of Physics; 1 year, 1, 2 module)Rus
Courses (2021/2022)
Computer Simulation of Multiatomic Systems (Master’s programme; Faculty of Physics; 1 year, 1, 2 module)Rus
Courses (2020/2021)
Computer Simulation of Multiatomic Systems (Master’s programme; Faculty of Physics; 1 year, 1, 2 module)Rus
Courses (2019/2020)
Computer Simulation of Multiatomic Systems (Master’s programme; Faculty of Physics; 1 year, 1, 2 module)Rus
Courses (2018/2019)
Computer Simulation of Multiatomic Systems (Master’s programme; Faculty of Physics; 1 year, 3, 4 module)Rus
Courses (2017/2018)
Computer Simulation of Multiatomic Systems (Master’s programme; Faculty of Physics; 1 year, 3, 4 module)Rus
Publications28
- Article T. V. Pavlova, V. M. Shevlyuga. Enhancing the reactivity of Si(100)–Cl toward PBr3 by charging Si dangling bonds // Journal of Chemical Physics. 2023. Vol. 159. No. 21. Article 214701. doi
- Article Vladimir M. Shevlyuga, Vorontsova Y. A., Tatiana V. Pavlova. PBr3 Adsorption and Dissociation on the Si(100) Surface // Journal of Physical Chemistry C. 2023. Vol. 127. No. 19. P. 8978-8983. doi
- Article Pavlova T., Shevlyuga V. M., Andryushechkin B. V., Eltsov K. N. Dangling bonds on the Cl- and Br-terminated Si(100) surfaces // Applied Surface Science. 2022. Vol. 591. Article 153080. doi
- Article Pavlova T., Шевлюга В. М., Андрюшечкин Б. В., Eltsov K. Dangling bonds on the Cl- and Br-terminated Si(100) surfaces // Applied Surface Science. 2022. Vol. 591. P. 153080-153080. doi
- Article T. V. Pavlova, V.M. Shevlyuga. Vacancy diffusion on a brominated Si(100) surface: Critical effect of the dangling bond charge state // Journal of Chemical Physics. 2022. Vol. 157. Article 124705. doi
- Article T.V. Pavlova, Eltsov K. Reactivity of the Si(100)-2×1-Cl surface with respect to PH3, PCl3, and BCl3: Comparison with PH3 on Si(100)-2×1-H // Journal of Physics: Condensed Matter. 2021. Vol. 33. No. 38. Article 384001. doi
- Article Pavlova T., Shevlyuga V.M., Andryushechkin B., Eltsov K. Chlorine insertion and manipulation on the Si(100)-2x1-Cl surface in the regime of local supersaturation // Physical Review B: Condensed Matter and Materials Physics. 2020. Vol. 101. No. 23. P. 235410-235410. doi
- Article Pavlova T. Hydrogen inserted into the Si(100)-2×1-H surface: a first-principles study // Physical Chemistry Chemical Physics. 2020. Vol. 22. P. 21851-21857. doi
- Article T.V. Pavlova, Шевлюга В. М., B.V. Andryushechkin, G.M. Zhidomirov, K.N. Eltsov. Local removal of silicon layers on Si(1 0 0)-2 × 1 with chlorine-resist STM lithography // Applied Surface Science. 2020. Vol. 509. P. 145235. doi
- Article S.L. Kovalenko, T.V. Pavlova, B.V. Andryushechkin, G.M. Zhidomirov, K.N. Eltsov. Ni-Doped Epitaxial Graphene Monolayer on the Ni(111) Surface // Physics of Wave Phenomena. 2020. Vol. 28. No. 3. P. 293-298. doi
- Article Pavlova T., Kovalenko S., Eltsov K. Room Temperature Propylene Dehydrogenation and Linear Atomic Chain Formation on Ni(111) // Journal of Physical Chemistry C. 2020. Vol. 124. No. 15. P. 8218-8224. doi
- Article T.V. Pavlova, S.L. Kovalenko, K.N. Eltsov. Room Temperature Propylene Dehydrogenation and Linear Atomic Chains Formation on Ni(111) // Journal of Physical Chemistry C. 2020. Vol. 124. No. 15. P. 8218-8224. doi
- Article Коваленко С. Л., Павлова Т. В., Андрюшечкин Б. В., Ельцов К. Н. Термопрограммируемый синтез монокристаллов квазисвободного N-графена из молекул ацетонитрила // Письма в Журнал экспериментальной и теоретической физики. 2020. Т. 111. № 10. С. 697-704. doi
- Article Skorokhodov E. S., Zhidomirov G.M., Eltsov K.N., Pavlova T.V. Ab Initio Study of the Early Stage of Si Epitaxy on the Chlorinated Si(100) Surface // Journal of Physical Chemistry C. 2019. Vol. 123. No. 32. P. 19806-19811. doi
- Article Nikita S. Komarov, Tatiana V. Pavlova, Boris V. Andryushechkin. Iodine Adsorption on Ni(110): 2D-Phase Transitions and NiI2 Growth // Journal of Physical Chemistry C. 2019. Vol. 123. No. 45. P. 27659-27665. doi
- Article B.V. Andryushechkin, T.V. Pavlova, K.N. Eltsov. Adsorption of halogens on metal surfaces // Surface Science Reports. 2018. Vol. 73. No. 3. P. 83-115. doi
- Article B.V. Andryushechkin, V.M. Shevlyuga (Шевлюга В. М., T.V.Pavlova, G.M. Zhidomirov, K.N. Eltsov. Adsorption of molecular oxygen on the Ag(111) surface: A combined temperature-programmed desorption and scanning tunneling microscopy study // Journal of Chemical Physics. 2018. Vol. 148. No. 24. P. 244702-1-244702-6. doi
- Article Андрюшечкин Б. В., Eltsov K., Pavlova T., Жидомиров Г. М. Adsorption of molecular oxygen on the Ag(111) surface: A combined temperature-programmed desorption and scanning tunneling microscopy study // Journal of Chemical Physics. 2018. Vol. 148. No. 24. Article 244702. doi (in press)
- Article T.V. Pavlova, G.M. Zhidomirov, K.N. Eltsov. First-Principle Study of Phosphine Adsorption on Si(001)-2x1-Cl // Journal of Physical Chemistry C. 2018. Vol. 122. No. 3. P. 1741-1745. doi
- Article Pavlova T., Eltsov K., Андрюшечкин Б. В., Жидомиров Г. М. STM and DFT Study of Chlorine Adsorption on the Ag(111)- p (4x4)-O Surface // Journal of Physical Chemistry C. 2018. Vol. 122. No. 50. P. 28862-28867. doi (in press)
- Article B.V. Andryushechkin, V.M. Shevlyuga (Шевлюга В. М., T.V. Pavlova, G.M. Zhidomirov, K.N. Eltsov. STM and DFT Study of Chlorine Adsorption on the Ag(111)-p(4x4)-O Surface // Journal of Physical Chemistry C. 2018. Vol. 122. No. 50. P. 28862-28867. doi
- Article Андрюшечкин Б. В., Eltsov K., Pavlova T., Жидомиров Г. М. Structural transformations on an oxidized Ag(111) surface // JETP Letters. 2017. Vol. 105. No. 5. P. 292-296. doi (in press)
- Article Б.В. Андрюшечкин, В.М. Ш., Т.В. Павлова, Г.М. Жидомиров, К.Н. Ельцов Структурные превращения на окисленной поверхности Ag(111) // Письма в Журнал экспериментальной и теоретической физики. 2017. Т. 105. С. 270-274. doi
- Article Коваленко С., Т.В. Павлова, Б.В. Андрюшечкин, Канищева О., К. Н. Ельцов Эпитаксиальный рост монокристалла графена на поверхности Ni(111) // Письма в Журнал экспериментальной и теоретической физики. 2017. Т. 105. С. 170-174. doi
- Article Коваленко С. Л., Павлова Т. В., Андрюшечкин Б. В., Канищева О., Ельцов К. Н. Эпитаксиальный рост монокристалла графена на поверхности Ni(111) // Письма в Журнал экспериментальной и теоретической физики. 2017. Т. 105. С. 170-174. doi
- Article B.V. Andryushechkin, Shevlyuga V., T.V. Pavlova, G.M. Zhidomirov, K.N. Eltsov. Adsorption of O-2 on Ag(111): Evidence of Local Oxide Formation // Physical Review Letters. 2016. Vol. 117. P. 056101-1-056101-5. doi
- Article T.V. Pavlova, B. V. Andryushechkin, G.M. Zhidomirov. First-Principle Study of Adsorption and Desorption of Chlorine on Cu(111) Surface: Does Chlorine or Copper Chloride Desorb? // Journal of Physical Chemistry C. 2016. Vol. 120. No. 5. P. 2829-2836. doi
- Article Komarov N. S., B. V. Andryushechkin, T. V. Pavlova. Iodine adsorption on Ni(111): STM and DFT study // Surface Science. 2016. Vol. 651. P. 112-119. doi