Ivan Makhov
- Research Fellow:HSE Campus in St. Petersburg / St. Petersburg School of Physics, Mathematics, and Computer Science / International Laboratory of Quantum Optoelectronics
- Senior Lecturer:HSE Campus in St. Petersburg / St. Petersburg School of Physics, Mathematics, and Computer Science / Department of Physics
- Ivan Makhov has been at HSE University since 2022.
Education and Degrees
- 2021
Candidate of Sciences* (PhD)
St. Petersburg State Electrotechnical University 'LETI' - 2019
Doctoral programme in Physics and Astronomy
Peter the Great St. Petersburg Polytechnic University - 2015
Master's in Electronics and Nanoelectronics
Peter the Great St. Petersburg Polytechnic University - 2013
Bachelor's in Electronics and Microelectronics
Saint Petersburg State Polytechnical University
According to the International Standard Classification of Education (ISCED) 2011, Candidate of Sciences belongs to ISCED level 8 - "doctoral or equivalent", together with PhD, DPhil, D.Lit, D.Sc, LL.D, Doctorate or similar. Candidate of Sciences allows its holders to reach the level of the Associate Professor.
Continuing education / Professional retraining / Internships / Study abroad experience
Programming for Everybody (Getting started with Python)
Courses (2023/2024)
- Mechanics (Bachelor’s programme; St. Petersburg School of Physics, Mathematics, and Computer Science ; 1 year, 1, 2 module)Rus
- Quantum optoelectronics (Bachelor’s programme; St. Petersburg School of Physics, Mathematics, and Computer Science ; 4 year, 1, 2 module)Rus
- Past Courses
Courses (2022/2023)
- Optics (Bachelor’s programme; St. Petersburg School of Physics, Mathematics, and Computer Science ; 2 year, 3, 4 module)Rus
- Thermodynamics and Molecular Physics (Bachelor’s programme; St. Petersburg School of Physics, Mathematics, and Computer Science ; 2 year, 1, 2 module)Rus
Courses (2021/2022)
- Electricity and Magnetism (Bachelor’s programme; St. Petersburg School of Physics, Mathematics, and Computer Science ; 1 year, 3, 4 module)Rus
- Mechanics (Bachelor’s programme; St. Petersburg School of Physics, Mathematics, and Computer Science ; 1 year, 1, 2 module)Rus
Publications35
- Article Adamov R. B., Melentev G. A., Sedova I. V., Sorokin S. V., Klimko G. V., Makhov I., Firsov D. A., Shalygin V. A. Terahertz photoluminescence in doped nanostructures with spatial separation of donors and acceptors // Journal of Luminescence. 2024. Vol. 266. Article 120302. doi
- Article N. V. Kryzhanovskaya, K. A. Ivanov, N. A. Fominykh, S. D. Komarov, I. S. Makhov, E. I. Moiseev, Guseva J., Kulagina M., Mintairov S., Kalyuzhnyy N., Lihachev A., Khabibullin R., Galiev R., Pavlov A., Tomosh K., M. V. Maximov, A. E. Zhukov. III–V microdisk lasers coupled to planar waveguides // Journal of Applied Physics. 2023. Vol. 134. No. 10. Article 103101. doi
- Article A. A. Karaborchev, I. S. Makhov, M. V. Maximov, N. V. Kryzhanovskaya, A. E. Zhukov. Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots // St. Petersburg Polytechnical University Journal: Physics and Mathematics. 2023. Vol. 16. No. 1.3. P. 157-162. doi
- Article Zhukov A., Moiseev E., Nadtochiy A., Fominykh N., Ivanov K., Makhov I., Maximov M., Zubov F., Kryzhanovskaya N. Optical Loss in Microdisk Lasers with Dense Quantum Dot Arrays // IEEE Journal of Quantum Electronics. 2023. Vol. 59. No. 1. Article 2000108. doi
- Article S. D. Komarov, Gridchin V. O., Lendyashova V. V., Kotlyar K. P., Reznik R. R., Dvoretckaia L. V., A. S. Dragunova, I. S. Makhov1, A. M. Nadtochiy, N. V. Kryzhanovskaya, Cirlin G. E., A. E. Zhukov. Optical properties of single InGaN nanowires with core-shell structure // St. Petersburg Polytechnical University Journal: Physics and Mathematics. 2023. Vol. 16. No. 1.2. P. 114-120. doi
- Article Makhov I., Ivanov K., Moiseev E., Fominykh N., Dragunova A., Kryzhanovskaya N., Zhukov A. Temperature evolution of two-state lasing in microdisk lasers with InAs/InGaAs quantum dots // Nanomaterials. 2023. Vol. 13. No. 5. Article 877. doi
- Article I.A. Melnichenko, A.M. Nadtochiy, K.A. Ivanov, I.S. Makhov, Maximov M., Mintairov S., Kalyuzhnyy N., N.V. Kryzhanovskaya, Zhukov A. Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method // St. Petersburg Polytechnical University Journal: Physics and Mathematics. 2023. Vol. 16. No. 1.1. P. 22-27. doi
- Article Makhov I., Ivanov K., Moiseev E., Dragunova A., Fominykh N., Kryzhanovskaya N., Zhukov A. Two-state lasing in a quantum dot racetrack microlaser // Optics Letters. 2023. Vol. 48. No. 13. P. 3515-3518. doi
- Article Makhov I., Ivanov K., Moiseev E., Dragunova A., Fominykh N., Shernyakov Y., Mikhail Maximov, Kryzhanovskaya N., Zhukov A. Two-state lasing in microdisk laser diodes with quantum dot active region // Photonics. 2023. Vol. 10. No. 3. Article 235. doi
- Article Мельниченко И. А., Крыжановская Н. В., Иванов К. А., Надточий А. М., Махов И. С., Козодаев М. Г., Хакимов Р. Р., Маркеев А. М., Воробьев А. А., Можаров А. М., Гусева Ю. А., Лихачев А. И., Колодезный Е. С., Жуков А. Е. Влияние пассивации поверхности цилиндрических мезаструктур на основе GaAs на их оптические свойства // Оптика и спектроскопия. 2023. Т. 131. № 8. С. 1112-1117. doi
- Article Крыжановская Н. В., Блохин С. А., Махов И. С., Моисеев Э. И., Надточий А. М., Фоминых Н. А., Зубов Ф. И., Максимов М. В., Жуков А. Е. Исследование p-i-n-фотодетектора с поглощающей средой на основе InGaAs/GaAs квантовых яма-точек // Физика и техника полупроводников. 2023. Т. 57. № 3. С. 202-206. doi
- Article Жуков А. Е., Крыжановская Н. В., Махов И. С., Моисеев Э. И., Надточий А. М., Фоминых Н. А., Минтаиров С. А., Калюжный Н. А., Зубов Ф. И., Максимов М. В. Модель быстродействия волноводного фотодиода с квантовыми точками // Физика и техника полупроводников. 2023. Т. 57. № 3. С. 215-220. doi
- Chapter Vinnichenko M., Makhov I., Panevin V., Ustimenko R., Melentev G., Sorokin S., Sedova I. Acceptor-Assisted Intraband Photoconductivity in GaAs/AlGaAs Quantum Wells, in: Proceedings of the 9th International Symposium OPTICS-2022. Springer, 2022. doi Ch. 7. P. 79-90. doi
- Article Makhov I., Budkin G. V., Graf S. V., Firsov D. A. Current induced drag of photons in GaAs/AlGaAs quantum wells // Micro and Nanostructures. 2022. Vol. 167. Article 207288. doi
- Article Vinnichenko M. Y., Makhov I., Ustimenko R. V., Sargsian T. A., Sarkisyan H. A., Hayrapetyan D. B., Firsov D. A. Doping effect on the light absorption and photoluminescence of Ge/Si quantum dots in the infrared spectral range // Micro and Nanostructures. 2022. Vol. 169. Article 207339. doi
- Article Zhukov A., Moiseev E., Nadtochiy A., Makhov I., Ivanov K., Dragunova A., Fominykh N., Shernyakov Y., Mintairov S., Kalyuzhnyy N., Mikushev S., Zubov F., Maximov M., Kryzhanovskaya N. Dynamic characteristics and noise modelling of directly modulated quantum well-dots microdisk lasers on silicon // Laser Physics Letters. 2022. Vol. 19. No. 2. Article 025801. doi
- Article F I Zubov, E I Moiseev, A M Nadtochiy, N A Fominykh, K A Ivanov, I S Makhov, A S Dragunova, M V Maximov, N A Kryzhanovskaya, A E Zhukov. Improvement of thermal resistance in InGaAs/GaAs/AlGaAs microdisk lasers bonded onto silicon // Semiconductor Science and Technology. 2022. Vol. 37. No. 7. Article 075010. doi
- Chapter Vinnichenko M. Y., Makhov I., Ustimenko R. V., Sarkisyan H. A., Firsov D. A. Infrared photoluminescence and absorption of Ge/Si quantum dots with different doping levels, in: 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). IEEE, 2022. doi P. 1-2. doi
- Chapter A. E. Zhukov, E. I. Moiseev, A. M. Nadtochiy, N. A. Fominykh, K. A. Ivanov, I. S. Makhov, A. S. Dragunova, N. V. Kryzhanovskaya, F. I. Zubov, M. V. Maximov, Mintairov S., Kalyuzhnyy N., Shernyakov Y. M., Gordeev N. Optical loss and noise modelling in microdisk lasers with InGaAs quantum well-dots, in: 2022 International Conference Laser Optics (ICLO). IEEE, 2022. doi doi
- Article Melnichenko I., Kryzhanovskaya N., Berdnikov Y., Moiseev E., Makhov I. Optical studies of InP nanostructures monolithically integrated in Si (100) // St. Petersburg Polytechnical University Journal: Physics and Mathematics. 2022. Vol. 15. No. 3.3. P. 260-264. doi
- Chapter Firsov D., Makhov I., Panevin V., Sarkisyan H., Vorobjev L. Optically Pumped Terahertz Radiation Sources Based on Impurity Carrier Transitions in Quantum Wells, in: Proceedings of the 9th International Symposium OPTICS-2022. Springer, 2022. doi Ch. 2. P. 21-38. doi
- Chapter Kryzhanovskaya N., Dragunova A., Fominykh N., M.V. Maximov, Moiseev E., F.I. Zubov, Ivanov K., Makhov I., Mozharov A. M., Kaluzhnyy N., Mintairov S., Guseva Y. A., Gordeev N., Zhukov A. Performance of InGaAs/GaAs Microdisk Lasers with Improved Thermal Resistance, in: 2022 International Conference Laser Optics (ICLO). IEEE, 2022. doi P. 1-1. doi
- Article Vinnichenko M. Y., Makhov I., Kharin N. Y., Graf S. V., Panevin V. Y., Sedova I. V., Sorokin S. V., Firsov D. A. Photoconductivity and infrared-light absorption in p-GaAs/AlGaAs quantum wells // Semiconductors. 2022. Vol. 55. No. 9. P. 710-716. doi
- Article Melnichenko I., Moiseev E., Kryzhanovskaya N., Makhov I., Nadtochiy A., Zhukov A. Submicron-Size Emitters of the 1.2–1.55 um Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate // Nanomaterials. 2022. Vol. 12. No. 23. Article 4213. doi
- Article N. A. Fominykh, E. I. Moiseev, I. S. Makhov, Min’kov K. N., A. M. Nadtochiy, Guseva Y. A., Kulagina M. M., Mintairov S. A., Kalyuzhnyy N. A., N. V. Kryzhanovskaya, A. E. Zhukov. The investigation of optical coupling of microlasers with tapered fiber // St. Petersburg Polytechnical University Journal: Physics and Mathematics. 2022. Vol. 15. No. 3.3. P. 167-170. doi
- Article Махов И. С., Бекман А. А., Кулагина М. М., Гусева Ю. А., Крыжановская Н. В., Надточий А. М., Максимов М. В., Жуков А. Е. Двухуровневая лазерная генерация в инжекционных микродисках на основе квантовых точек InAs/InGaAs // Письма в Журнал технической физики. 2022. Т. 48. № 12. С. 40-43. doi
- Article Адамов Р., Петрук А., Мелентьев Г., Седова И., Сорокин С., Махов И. С., Фирсов Д., Шалыгин В. Фотолюминесценция ближнего ИК-диапазона в квантовых ямах n-GaAs/AlGaAs с различным положением компенсирующей акцепторной примеси // Научно-технические ведомости Санкт-Петербургского государственного политехнического университета. Физико-математические науки. 2022. Т. 15. № 4. С. 32-43. doi
- Chapter Ivan S. Makhov, Panevin V. Y., Vorobjev L. E., Firsov D. A. Effect of compensation and near-infrared lasing on donor-related terahertz photoluminescence in GaAs/AlGaAs quantum wells, in: 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). IEEE, 2021. doi P. 1-2. doi
- Chapter Isaev N. K., E. I. Moiseev, N. A. Fominykh, N. V. Kryzhanovskaya, F. I. Zubov, K. A. Ivanov, I. S. Makhov, M. V. Maximov, A. E. Zhukov. Temperature stability of small-signal modulation response of WGM microlasers with InGaAs/GaAs quantum well-dots in the active region, in: 8th International School and Conference "Saint Petersburg OPEN 2021" on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021. Institute of Physics Publishing (IOP), 2021. Ch. 012082. doi
- Article Budkin G. V., Makhov I. S., Firsov D. A. The drag of photons by electric current in quantum wells // Journal of Physics: Condensed Matter. 2021. Vol. 33. No. 16. Article 165301. doi
- Article Vinnichenko M. Y., Makhov I. S., Panevin V. Y., Vorobjev L. E., Sorokin S. V., Sedova I. V., Firsov D. A. Acceptor-related infrared optical absorption in GaAs/AlGaAs quantum wells // Physica E: Low-Dimensional Systems and Nanostructures. 2020. Vol. 124. Article 114301. doi
- Chapter Vinnichenko M. Y., Makhov I. S., Panevin V. Y., Kharin N. Y., Vorobjev L. E., Sorokin S. V., Sedova I. V., Firsov D. A. Acceptor-related terahertz and infrared photoconductivity in p-type GaAs/AlGaAs quantum wells, in: 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 Vol. 1482. Bristol : IOP Publishing, 2020. doi doi
- Chapter Kurnosova A. D., Makhov I., Firsov D. A. Terahertz luminescence and photoconductivity associated with the impurity electron transitions in GaAs/AlGaAs quantum wells, in: 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 Vol. 1482. Bristol : IOP Publishing, 2020. doi Ch. 012019. P. 1-6. doi
- Article Makhov I. S., Panevin V. Y., Firsov D. A., Vorobjev L. E., Klimko G. V. Impurity-assisted terahertz photoluminescence in compensated quantum wells // Journal of Applied Physics. 2019. Vol. 126. No. 17. Article 175702. doi
- Article Makhov I. S., Panevin V. Y., Firsov D. A., Vorobjev L. E., Vasil'ev A. P., Maleev N. A. Terahertz photoluminescence of the donor doped GaAs/AlGaAs quantum wells controlled by the near-infrared stimulated emission // Journal of Luminescence. 2019. Vol. 210. P. 352-357. doi
Conferences
Larisa Tsvetkova: 'At a Research University, Science Always Comes First'
Over this year, scientists from HSE University-St Petersburg have managed to bring in more external grant funding from the Russian Science Foundation. The university launched new laboratories and projects, developed research in partnership with other universities, and some articles were published in international journals. How science at HSE University-St Petersburg lives and why involvement in the research process is important for the university education—explains Larisa Tsvetkova, Deputy Director for Research Activities at HSE University-St Petersburg.