• A
  • A
  • A
  • ABC
  • ABC
  • ABC
  • А
  • А
  • А
  • А
  • А
Regular version of the site

Complex modeling of interconnected electro-thermal, electromagnetic, photoelectric and radiation effects and phenomena in micro- and nanoelectronic devices, circuits and systems

Priority areas of development: engineering science
2018
The project has been carried out as part of the HSE Program of Fundamental Studies.

Publications:


Петросянц К. О., Харитонов И. А., Самбурский Л. М., Исмаил-Заде М. Р. Принципы разработки библиотек SPICE-моделей электронных компонентов для ответственных применений отечественного производства // В кн.: Международный форум «Микроэлектроника-2018». 4-я Международная научная конференция «Электронная компонентная база и микроэлектронные модули». Сборник тезисов. Республика Крым, г. Алушта, 01–06 октября 2018 г. М. : Техносфера, 2018. С. 308-312.
Petrosyants K. O. Compact Device Models for BiCMOS VLSIs Simulation in the Extended Temperature Range (from -200°C to +300°C), in: 24th International Workshop on Thermal Investigations of ICs and Systems (2018). IEEE, 2018. P. 1-6.
Uvaysov S. U. Proceedings of the International Scientific – Practical Conference « INFORMATION INNOVATIVE TECHNOLOGIES» (I2T), 2018. , 2018.
Kharitonov I. A. Application of electro-thermo-rad models for spice simulation of digital CMOS circuit behavior with account for combined thermal and radiation effects, in: Proceedings of the International Scientific – Practical Conference « INFORMATION INNOVATIVE TECHNOLOGIES» (I2T), 2018. , 2018. P. 475-481.
Adonin A. S., Petrosyants K. O., Popov D. Modeling of the submicron MOSFETs characteristics for UTSi technology, in: International Conference on Micro- and Nanoelectronics - 2018, ICMNE 2018. ООО “МАКС Пресс”: SPIE, 2018. doi P. 29-29.
Petrosyants K. O., Kozhukhov M. V., Dvornikov O. V., Savchenko E. M., Budyakov A. S. SPICE-model of SiGe HBT Taking into Account Radiation Effects, in: 2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings. M. : IEEE, 2018. Ch. 380. P. 1-4. doi
Petrosyants K. O., Nikita I. Ryabov, Boris G. Lvov, Ekaterina I. Batarueva Б. Е. Development of Compact SPICE-models of IC Resistive Interconnects with Different Configurations, in: 2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings. M. : IEEE, 2018. Ch. 10. P. 1-4. doi
Petrosyants K. O., Popov D., Bykov D. Quasi-3D TCAD modeling of STI radiation-induced leakage currents in SOI MOSFET structure // Journal of Physics: Conference Series. 2018. No. 1103. P. 1-6.