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  • Development of the methods for multilevel research and simulation of modern temperature and radiation hardened microelectronic components from material level to circuit level

Development of the methods for multilevel research and simulation of modern temperature and radiation hardened microelectronic components from material level to circuit level

2013
Department: Laboratory 'Modeling Hardware Components in Micro- and Nanoelectronics'
The project has been carried out as part of the HSE Program of Fundamental Studies.

Object of Research: Models, methods and computer programs for design amd simulation of advanced microelectronic components ranging from starting materials to ready-made devices and integrated circuits with increased temperature and radiation hardness.

Goal of Research:

  • Development of methods and tools for researching of characteristics of components of advanced microelectronic products with increased hardness to radiation and temperature influence.
  • Development of improved methods, tools and models for designing of circuits on their basis which are intended to be used in special-purpose electronic equipment subject to the influence of various types of radiation and temperature.

Empirical Base of Research:

  • Characteristics of actual test specimen of semiconductor devices, integrated circuits and printed circuit boards.
  • Characteristics of semiconductor materials, devices, integrated circuits and printed circuit boards with increased hardness to radiation and temperature influence, which are given in leading foreign and domestic journals, information materials and reports of leading foreign and domestic companies involved in development and production of electron components, Internet sites etc.

Results of Research:

1. Methdology for multilevel designing of components of Si bipolar, SiGe hetejunction bipolar and SOI/SOS CMOS integrated circuits, operating both in normal conditions and under the influence of external factors (temperature and various types of  cosmic radiation). Methdology is based on standard EDA tools: TCAD—ICCAP—Spectre/Eldo/HSpice etc.) that were customized to simulation of LSI’s under the conditions mentioned above.

2. Software system for simulation studies of Si BJT / SiGe HBT and SOI/SOS MOSFETs and other LSI components subject to cosmic radiation factors: temperature, ionising radiation (gamma-, neutrons, protons), single nuclear particles, which are up to the latest world achievements in respect of qualitative and quanitative level of models, completeness and complexity of solvable prolems.

3. 2D and 3D numerical models of electron components of various levels (traces, semiconductor devices and LSI components, LSI and PCB fragments) accounting for temperature effects.

4. Compact SPICE models of Si/SiGe BJTs amd MOSFETs accounting for radiation and temperature effects.

5. Three types of model parameter extraction procedures on the basis of test structures measurement results or TCAD simulation: 1) specific compact model-oriented, 2) employing a universal Agilent IC‑CAP extraction tool, 3) employing a specific ISExtract extraction tool—a part of Synopsys TCAD process and device simulation tool.

6. Methodology for designing compact models of BJTs and MOSFETs with account for radiation effects which comprises a simultaneous employment of macromodeling and introduction of approximating functions of parameters on radiation factors to the model.

7. Device and Process TCAD models of semiconductor devices and LSI components that physically account for radiation effects (gamma, neutrons, protons, single nuclear particles) and thermal effects (external temperature, self-heating).

8. Current-carrying capability and 2D thermal fields within the volume of traces (Ti, Cu, Ni) with low and very low thickness conductive layer (up to 2.5 um) on Aluminium, ceramic and polyimide substrates with various thickness and length. These results are of great interest for designing of ultramodern PCBs.

9. Results of neutron- and gamma-irradiation of domestic Si BJTs with cut-off frequency fT=5 GHz. Input and output characteristic curves before and after irradiation. SPICE model parameters of Si BJTs that are employed in radiation-hard circuit engineering in JSC Pulsar and JSC VNIIEM.

10. Characteristic curves of discrete diodes (4 types), BJTs and MOSFETs (7 types), operational amplifier 544UD2 in the temperature range –60 °C…+100 °C. SPICE model parameters that are employed in special-purpose electronic equipment in Federal State Unitary Enterprise VNIIA.

11. Method of determination of contact resistance to high-resistivity semiconductors (GaAs, CdTe etc.) employing forced illumination of near-contact zones (no domestic or international

12. For typical stages of analog and digital Si bipolar and SiGe heterojunction bipolar LSIs’ and SOI/SOS CMOS LSIs’ operating area is assessed with account for temperature and radiation.

Level of implementation,  recommendations  on implementation or outcomes of the implementation of Results

Tne results of this work can be used in the following enterprises: JSJ NIIME and Micron, JSC Research and Production Enterprise Pulsar, JSC NIIMA Progress, JSC Angstrem and others, which possess the necessary processing equipment and high-level personnel skills; above that, on enterprises of the Ministry of Defence, Federal Space Agency, Federal Atomic Energy Agency and other government agencies that are engaged in design and development of special-purpose electronic equipment, including: Federal State Unitary Enterprise Scientific Institute of Measuring Systems (N. Novgorod), Federal State Unitary Enterprise Russian Federal Nuclear Center VNIITF (Snezhinsk), Federal State Unitary Enterprise VNIIA, JSC Research and Production Association for Measurement Equipment (Korolev, Moscow Region) etc.

Results of the work were implemented:

In JSC Research and Production Enterprise Pulsar (see Item 9 of the Summary)

In JSC VNIIEM Corp. (see Item 9 of the Summary)

In Federal State Unitary Enterprise VNIIA . (see Item 10 of the Summary)

Field of application:

Electronic equipment for nuclear power industry, airspace industry, radiolocation, telecomunications, weapons and military systems, nuclear and othe ecological accidents control, nuclear and chemical waste disposal, as well as civilian special-purpose equipment.

Publications:


Петросянц К. О., Харитонов И. А., Попов Д. А. Применение пакетов программ TCAD и HSPICE для анализа переходных процессов в ячейках КМОП ИС с учетом влияния эффекта саморазгрева // В кн.: Труды международной научно-практической конференции "International Scientific – Practical Conference" INNOVATIVE INFORMATION TECHNOLOGIES", Prague, 2013, April 22-26 / Отв. ред.: И. А. Иванов; под общ. ред.: С. У. Увайсов; науч. ред.: С. У. Увайсов. Т. 3. М. : МИЭМ НИУ ВШЭ, 2013. С. 451-458.
Харитонов И. А., Гоманилова Н. Б., Петросянц К. О., Самодуров Д. А., Александров А. В., Малышев А. А., Чемеза Д. М. Информационно-измерительный комплекс для определения параметров схемотехнических SPICE моделей электронных компонентов с учетом температуры // В кн.: Инновации на основе информационных и коммуникационных технологий: Материалы международной научно-практической конференции (2013) / Отв. ред.: И. А. Иванов; под общ. ред.: С. У. Увайсов; науч. ред.: А. Н. Тихонов. М. : МИЭМ НИУ ВШЭ, 2013. С. 274-276.
Попов Д. А. Моделирование тепловых процессов в структуре КМОП КНИ инвертора // В кн.: Микроэлектроника и информатика – 2013. Тезисы докладов. Зеленоград : МИЭТ, 2013. С. 108-108.
Попов Д. А. Влияние температуры на радиационный сдвиг порогового напряжения МОП-транзистора С. 246-249.
Кожухов М. В. Влияние отжига на процесс восстановления параметров кремниевого биполярного транзистора, подвергнутого воздействию радиации С. 244-246.
Харитонов И. А., Гоманилова Н. Б., Петросянц К. О., Самодуров Д. А., Александров А. В., Малышев А. А., Чемеза Д. М. Информационно-измерительный комплекс для определения параметров схемотехнических SPICE моделей электронных компонентов с учетом температуры С. 274-276.
Петросянц К. О., Харитонов И. А., Самбурский Л. М. Cравнительный анализ SPICE-моделей КНИ/КНС МОП-транзисторов для учёта радиационных эффектов // В кн.: Электроника, микро- и наноэлектроника: Сборник научных трудов 15-ой Российской научно-технической конференции (г. Суздаль, 25 – 28 июня 2013 г.) / Науч. ред.: В. Я. Стенин. М. : НИЯУ МИФИ, 2013. С. 303-309.
Петросянц К. О., Харитонов И. А., Самбурский Л. М., Богатырев В. Н., Поварницына З. М., Щекин А., Гоманилова Н. Б. Проектирование радиационно-стойкого прецизионного усилителя на базе КНС КМОП-технологии // В кн.: Электроника, микро- и наноэлектроника: Сборник научных трудов 15-ой Российской научно-технической конференции (г. Суздаль, 25 – 28 июня 2013 г.) / Науч. ред.: В. Я. Стенин. М. : НИЯУ МИФИ, 2013. С. 296-302.
Труды международной научно-практической конференции "International Scientific – Practical Conference" INNOVATIVE INFORMATION TECHNOLOGIES", Prague, 2013, April 22-26 / Отв. ред.: И. А. Иванов; под общ. ред.: С. У. Увайсов; науч. ред.: С. У. Увайсов. Т. 3. М. : МИЭМ НИУ ВШЭ, 2013.
Петросянц К. О., Кожухов М. В. SPICE-модели кремниевых БТ и кремний германиевых ГБТ, учитывающие влияние радиационных факторов // В кн.: Труды международной научно-практической конференции "International Scientific – Practical Conference" INNOVATIVE INFORMATION TECHNOLOGIES", Prague, 2013, April 22-26 / Отв. ред.: И. А. Иванов; под общ. ред.: С. У. Увайсов; науч. ред.: С. У. Увайсов. Т. 3. М. : МИЭМ НИУ ВШЭ, 2013. С. 320-326.
Petrosyants K., Kharitonov I. A., Kozynko P., Popov A. Electronic components thermal regimes investigation by IR thermography, in: Proceedings of the 12-the International Workshop on Advanced Infrared Technology and Applications. Turin : Politecnico di Torino, 2013. P. 185-189.
Petrosyants K. O., Kortunov A. V., Kharitonov I. A., Попов А. А., Гоманилова Н. Б., Rjabov N. Analysis and Simulation of Temperature-Current Rise in Modern PCB Traces, in: Proceedings of IEEE East-West Design & Test Symposium (EWDTS’13). Kharkov : Kharkov national university of radioelectronics, 2013. P. 308-311.
Petrosyants K. O., Kharitonov I. A. Account for radiation effects in signal integrity analysis of PCB digital systems, in: Proceedings 16th Euromicro Conference on Digital System Design DSD 2013 Proceedings of the 16th Euromicro Conference on Digital System Design (DSD 2013) Santander, Spain. Santander : IEEE Computer Society, 2013. P. 479-482.
К. О. Петросянц Моделирование тепловых режимов электронных компонентов // В кн.: Твердотельная электроника. Сложные функциональные блоки РЭА. Материалы XII Научно-технической конференции / Отв. ред.: В. Синкевич, А. Филатов, Савченко Е. М., А. Пронин, Е. Череменская, А. Мартынов. М. : МНТОРЭС им. А. С. Попова, 2013. С. 229-232.
К. О. Петросянц, Смирнов Д. С., М. В. Кожухов Влияние электронного и гамма-излучений на статические характеристики кремниевых СВЧ биполярных транзисторов // В кн.: Твердотельная электроника. Сложные функциональные блоки РЭА. Материалы XII Научно-технической конференции / Отв. ред.: В. Синкевич, А. Филатов, Савченко Е. М., А. Пронин, Е. Череменская, А. Мартынов. М. : МНТОРЭС им. А. С. Попова, 2013. С. 239-242.
Твердотельная электроника. Сложные функциональные блоки РЭА. Материалы XII Научно-технической конференции / Отв. ред.: В. Синкевич, А. Филатов, Савченко Е. М., А. Пронин, Е. Череменская, А. Мартынов. М. : МНТОРЭС им. А. С. Попова, 2013.
Petrosyants K. O., Kharitonov I. A., Sambursky L. M. The Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects, in: Book of Abstracts of the 3rd International Conference on Advanced Measurement and Test , Xiamen, China, March 13-14, 2013. Xiamen : , 2013. P. 35-36.
Petrosyants K. O., Kharitonov I. A., Popov D. Coupled TCAD-SPICE Simulation of Parasitic BJT Effect on SOI CMOS SRAM SEU, in: Proceedings of IEEE East-West Design & Test Symposium (EWDTS’13). Kharkov : Kharkov national university of radioelectronics, 2013. P. 312-315.
K. Petrosyants, E. Orekhov, I. Kharitonov, Popov D. TCAD analysis of self-heating effects in bulk silicon and SOI n-MOSFETs // Proceedings of SPIE. 2012. Vol. 8700. P. 16.1-16.6.