Tag " artificial intelligence"

Speaking at the IPQuorum.Music forum on October 15, Leonid Gokhberg, HSE First Vice Rector, and Daniil Kudrin, an expert at the Centre for Industry and Corporate Projects of HSE ISSEK, presented the findings of the first study in Russia on the economic impact of GenAI on creative professions. The analysis shows that creators’ potential losses could reach one trillion roubles by 2030.

On October 24–25, 2025, the AI and Digital Science Institute of the HSE Faculty of Computer Science will host the fourth annual Fall into ML 2025 conference at the HSE Cultural Centre. The event is once again supported by its general partner, Sber. The focus this year is on breakthrough research and the future of fundamental AI.

Mathematicians at HSE University believe that there is no need to fear losing jobs because of the widespread use of AI, while at the same time they warn against uncritical acceptance of works and projects prepared with its help. AI, however, can be a useful tool in research, creating models and processing large volumes of information.

Voice assistants have become part of everyday life. They can plan routes, play music and films, and answer questions. But the quality of their speech requires assessment. To address this, students of the Applied Artificial Intelligence Workshop at the HSE University and VK Engineering and Mathematics Schoolhave developed neural networks capable of evaluating speech synthesis.

The International Summer Institute on AI in Education has opened in Shanghai. The event is organised by the HSE Institute of Education in partnership with East China Normal University (ECNU). More than 50 participants and key speakers from over ten countries across Asia, Europe, North and South America have gathered to discuss the use of AI technologies in education and beyond.

Scientists from HSE University, in collaboration with researchers from the University of Southern California, have developed an algorithm that rapidly and accurately predicts the behaviour of quantum systems, from quantum computers to solar panels. This methodology enabled the simulation of processes in the MoS₂ semiconductor and revealed that the movement of charged particles is influenced not only by the number of defects but also by their location. These defects can either slow down or accelerate charge transport, leading to effects that were previously difficult to account for with standard methods. The study has been published in Proceedings of the National Academy of Sciences (PNAS).