Electrical Simulation of Submicron CMOS Integrated Circuit Elements under Extreme High Temperature Conditions

The main purpose of this paper is to conduct thermal simulation of elements of submicron CMOS integrated circuits under extreme high temperature conditions, to evaluate their thermal resistance. The first Chapter presents a literature review on the topic, explains the operational principles of the chosen voltage reference circuit. The second Chapter is dedicated to SPICE model parameters extraction for MOS transistors by means of a program complex IC-CAP by Agilent; the obtained SPICE models are presented in Appendix 1. The third Chapter presents simulation results of the voltage reference circuit under extreme high temperature conditions. This Chapter includes a performance parameters verification in the temperature range up to 200°C at rated supply voltage, performance forecasting of the circuit in the temperature range up to 200°C at rated supply voltage, and performance forecasting of the circuit in the temperature range up to 300°C at rated supply voltage; output voltage and current consumption dependences against temperature are exhibited.