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  • Experimental Investigation and SPICE Simulation of Characteristics of CMOS Logic Circuits with Account for Low Dose Rate Irradiation

Experimental Investigation and SPICE Simulation of Characteristics of CMOS Logic Circuits with Account for Low Dose Rate Irradiation

Student: Zvyagintsev Dmitriy

Supervisor: Igor A. Kharitonov

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Infocommunication Technologies and Systems (Bachelor)

Year of Graduation: 2020

In this work, we studied and simulated the effects of ionizing radiation on CMOS circuits. Schemes implementing the functions AND-NOT and OR-NOT were modeled at the following values of total dose: 0, 88, 220, 331, 386, 530 krad. The simulated and experimental characteristics are compared. Based on the comparison results, the values of threshold stresses and mobilities for each dose were obtained. Using these values, the defect concentrations Nit and Not were calculated. Also, the obtained SPICE models made it possible to estimate the delay times for these doses and determine at what dose the time parameters of the circuit will go beyond the boundaries indicated in the technical specifications.

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