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Analysis of Statistical Variation of CMOS-Transistors Fabricated by a Domestic 0.18um Technology

Student: Nina Blokhina

Supervisor: Lev M. Sambursky

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Electronic Engineering (Master)

Year of Graduation: 2020

This graduate work was held in MIEM HSE on 2nd year of 11.04.04 «Electron-ics and Nanoelectronics» field of study of Master’s Programme 'Electronic Engineer-ing' of School of Electronic Engineering. The work contains 53 pages and 5 appendix-es. The main text contains theoretic introduction, statement of the problem, de-scription of the research method, description of object and environment of research, results. At the end of the report, conclusions are presented listing the goals achieved, and a bibliographic list. In this work, the statistical variation of the parameters of transistors manufac-tured according to technology with a minimal topological size of 0.18 μm for use in extreme conditions (up to 300 ° C) was studied.

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