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Detemination of FET Model Parameters for Microwafe Frequencies

Student: Dmitry Stepygin

Supervisor: Lev M. Sambursky

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Infocommunication Technologies and Systems (Bachelor)

Final Grade: 8

Year of Graduation: 2017

Abstract The main purpose of this work is the formation of a set of instructions for determing (extraction) the parameters of the model of a field-effect transistor, using MOS-transistor as an example. In the first chapter of the work literature review is given. Second chapter describes the process of measuring S-parameters, also typical measurement scheme for high-frequency modeling by Keysight Technologies is illustrated. The procedure of de-embedding with examples is described. In the third chapter, a suitable high-frequency model and its rationale are selected. In the fourth, the optimal route for extracting the parameters of the high-frequency model of the MOSFET is presented. The extraction of paremeters (static, capacitive, high-frequency) for a set of test structures was carried out. And also the relative error of alignment of the simulated and measured electrical characteristics is determined.

Full text (added May 29, 2017)

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