Investigation of the Characteristics of a Semiconductor Structure Based on a Junctionless Transistor

Student: Moiseev Grigor

Faculty: HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE)

Educational Programme: Materials. Devices. Nanotechnology (Master)

Year of Graduation: 2021

This final qualifying work describes transistors that do not contain p-n junctions - JLFET (Junctionless Field Effect Transistor) transistors. The physical foundations of the functioning of an junctionless transistor are considered. The influence of a number of parameters on the performance of junctionless transistors is considered. On the basis of an junctionless transistor, a structure has been proposed that has better characteristics in comparison with an junctionless transistor. Numerical simulation of the proposed structure in the TCAD system at various temperature conditions has been carried out. The current-voltage characteristic (CVC) of the proposed structure is calculated. It is shown that the proposed structure has a better I – V characteristic in comparison with the I – V characteristic of an junctionless transistor.

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