Преждо Олег
- Главный научный сотрудник:Московский институт электроники и математики им. А.Н. Тихонова / Департамент электронной инженерии
- Начал работать в НИУ ВШЭ в 2020 году.
- Научно-педагогический стаж: 5 лет.
Образование, учёные степени
- 1997PhD: Техасский университет
- 1991
Специалитет: Харьковский государственный университет им. А.М. Горького, специальность «Химия»
Публикации16
- Статья Nayak P. K., Perez C. M., Liu D., Oleg V. Prezhdo, Ghosh D. A-Cation-Dependent Excited State Charge Carrier Dynamics in Vacancy-Ordered Halide Perovskites: Insights from Computational and Machine Learning Models // Chemistry of Materials. 2024. Vol. 36. No. 8. P. 3875-3885. doi
- Статья Liu D., Wu Y., Mikhail R. Samatov, Andrey S. Vasenko, Evgueni V. Chulkov, Oleg V. Prezhdo. Compression Eliminates Charge Traps by Stabilizing Perovskite Grain Boundary Structures: An Ab Initio Analysis with Machine Learning Force Field // Chemistry of Materials. 2024. Vol. 36. No. 6. P. 2898-2906. doi
- Статья Wang B., Wu Y., Liu D., Vasenko A., Casanova D., Prezhdo O. Efficient Modeling of Quantum Dynamics of Charge Carriers in Materials Using Short Nonequilibrium Molecular Dynamics // The Journal of Physical Chemistry Letters. 2023. Vol. 14. No. 37. P. 8289-8295. doi
- Статья Das A., Liu D., Wary R. R., Andrey S. Vasenko, Oleg V. Prezhdo, Nair R. G. Enhancement of Photocatalytic and Photoelectrochemical Performance of ZnO by Mg Doping: Experimental and Density Functional Theory Insights // The Journal of Physical Chemistry Letters. 2023. Vol. 14. No. 18. P. 4134-4141. doi
- Статья Liu D., Wu Y., Vasenko A., Prezhdo O. Grain boundary sliding and distortion on a nanosecond timescale induce trap states in CsPbBr3: ab initio investigation with machine learning force field // Nanoscale. 2023. Vol. 15. No. 1. P. 285-293. doi
- Статья Ran J., Wang B., Wu Y., Liu D., Perez C., Vasenko A., Prezhdo O. Halide Vacancies Create No Charge Traps on Lead Halide Perovskite Surfaces but Can Generate Deep Traps in the Bulk // The Journal of Physical Chemistry Letters. 2023. Vol. 14. No. 26. P. 6028-6036. doi
- Статья Das A., Liu D., Wary R. R., Vasenko A., Prezhdo O., Nair R. Mn-Modified ZnO Nanoflakes for Optimal Photoelectrochemical Performance Under Visible Light: Experimental Design and Theoretical Rationalization // The Journal of Physical Chemistry Letters. 2023. Vol. 14. No. 43. P. 9604-9611. doi
- Статья Liu D., Perez C. M., Vasenko A., Prezhdo O. Ag–Bi Charge Redistribution Creates Deep Traps in Defective Cs2AgBiBr6: Machine Learning Analysis of Density Functional Theory // The Journal of Physical Chemistry Letters. 2022. Vol. 13. No. 16. P. 3645-3651. doi
- Статья Zhao X., Andrey S. Vasenko, Oleg V. Prezhdo, Long R. Anion Doping Delays Nonradiative Electron–Hole Recombination in Cs-Based All-Inorganic Perovskites: Time Domain ab Initio Analysis // The Journal of Physical Chemistry Letters. 2022. Vol. 13. No. 49. P. 11375-11382. doi
- Статья A.S. Vasenko, Agrawal S., Prezhdo O., Trivedi D. Charge carrier nonadiabatic dynamics in non-metal doped graphitic carbon nitride // Journal of Chemical Physics. 2022. Vol. 156. No. 9. Article 094702. doi
- Статья Shi R., Fang W., Vasenko A., Long R., Prezhdo O. Efficient passivation of DY center in CH3NH3PbBr3 by chlorine: Quantum molecular dynamics // Nano Research. 2022. Vol. 15. No. 3. P. 2112-2122. doi
- Статья Wu Y., Liu D., Chu W., Wang B., Andrey S. Vasenko, Oleg V. Prezhdo. Fluctuations at Metal Halide Perovskite Grain Boundaries Create Transient Trap States: Machine Learning Assisted Ab Initio Analysis // ACS Applied Materials & Interfaces. 2022. Vol. 14. No. 50. P. 55753-55761. doi
- Статья Shi R., Fang Q., Vasenko A., Long R., Fang W., Prezhdo O. Structural Disorder in Higher-Temperature Phases Increases Charge Carrier Lifetimes in Metal Halide Perovskites // Journal of the american chemical society. 2022. Vol. 144. No. 41. P. 19137-19149. doi
- Статья Li W., She Y., Andrey S. Vasenko, Oleg V. Prezhdo. Ab initio nonadiabatic molecular dynamics of charge carriers in metal halide perovskites // Nanoscale. 2021. Vol. 13. No. 23. P. 10239-10265. doi
- Статья Wu Y., Chu W., A.S. Vasenko, O.V. Prezhdo. Common Defects Accelerate Charge Carrier Recombination in CsSnI3 without Creating Mid-Gap States // The Journal of Physical Chemistry Letters. 2021. Vol. 12. P. 8699-8705. doi
- Статья Shi R., A.S. Vasenko, Long R., O.V. Prezhdo. Edge Influence on Charge Carrier Localization and Lifetime in CH3NH3PbBr3 Perovskite: Ab Initio Quantum Dynamics Simulation // The Journal of Physical Chemistry Letters. 2020. Vol. 11. No. 21. P. 9100-9109. doi